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Interfacial energies of solid CuAl2 in the CuAl2-Ag2Al pseudo binary alloy
(ELSEVIER SCIENCE SA, 2010)
Gibbs-Thomson coefficient, solid-liquid interfacial energy and grain boundary energy are important parameters for people doing comparisons between experimentally observed solidification morphology and predictions from ...
Influence of growth rate on microstructure, microhardness, and electrical resistivity of directionally solidified Al-7 wt% Ni hypo-eutectic alloy
(KOREAN INST METALS MATERIALS, 2013)
Al-7 wt% Ni alloy was directionally solidified upwards with different growth rates, V (8.3-489.5 mu m/s) at constant temperature gradient, G (4.2 K/mm) using a Bridgman-type growth apparatus. The dependence of the dendritic ...
Mechanical, electrical, and thermal properties of the directionally solidified Bi-Zn-Al ternary eutectic alloy
(SPRINGER, 2014)
A Bi-2.0Zn-0.2Al (wt%) ternary eutectic alloy was prepared using a vacuum melting furnace and a casting furnace. The samples were directionally solidified upwards at a constant growth rate (V = 18.4 mu m/s) under different ...
Effects of Cooling Rate and Composition on Mechanical Properties of Directionally Solidified Pb100-x-Sn-x Solders
(SPRINGER, 2011)
Pb100-x-Sn-x solders (x = 5 wt.%, 10 wt.%, 20 wt.%, 35 wt.%, 50 wt.%, 60 wt.%, 61.9 wt.%, and 95 wt.%) were directionally solidified upward over a wide range of cooling rates (T) over dot (0.016 K s(-1) to 4.0 K s(-1)) by ...
Measurement of solid-liquid interfacial energy in the In-Bi eutectic alloy at low melting temperature
(IOP PUBLISHING LTD, 2007)
The Gibbs-Thomson coefficient and solid-liquid interfacial energy of the solid In solution in equilibrium with In Bi eutectic liquid have been determined to be (1.46 +/- 0.07) x 10(-7) K m and (40.4 +/- 4.0) x 10(-3) J ...
Dependence of Electrical Resistivity on Temperature and Sn Content in Pb-Sn Solders
(SPRINGER, 2011)
Pb(100-x)-Sn-x solders (x = 5 wt.%, 10 wt.%, 20 wt.%, 35 wt.%, 50 wt.%, 60 wt.%, 61.9 wt.%, and 95 wt.%) were directionally solidified upward with a constant growth rate (V = 37.4 mu m/s) in a temperature gradient (G = 4.8 ...
Dependence of electrical and thermal conductivity on temperature in directionally solidified Sn-3.5 wt% Ag eutectic alloy
(SPRINGER, 2011)
Sn-3.5 wt% Ag alloy was directionally solidified upward with a constant growth rate (V = 16.5 mu m/s) and a temperature gradient (G = 3.3 K/mm) in a Bridgman-type growth apparatus. The variations of electrical resistivity ...
Microstructural, mechanical, electrical and thermal characterization of arc-melted Ni-Si and Co-Si alloys
(ELSEVIER SCIENCE BV, 2010)
This work presents the results of characterization of as solidified arc-melted Ni-Si and Co-Si alloys. The alloys of different compositions of the constitutions Ni, Co, and Si of purity of 99.99% were prepared by arc melting ...
The Dependence of Lamellar Spacings and Microhardness on the Growth Rate in the Directionally Solidified Bi-43 wt.% Sn Alloy at a Constant Temperature Gradient
(KOREAN INST METALS MATERIALS, 2009)
Bi-43 wt.% Sn eutectic samples were directionally solidified upward with five different growth rates (V = 8.3-164.8 mu m/s) at a constant temperature gradient (G = 3.55 K/mm) in a Bridgman type directional solidification ...
Determination of interfacial energies of solid Sn solution in the In-Bi-Sn ternary alloy
(ELSEVIER SCIENCE INC, 2009)
The equilibrated grain boundary groove shapes of solid Sn solution (Sn-40.14 at.% In-16.11 at.% Bi) in equilibrium with the In-Bi-Sn liquid (In-21.23 at.% Bi-19.04 at.% Sn) were observed from the quenched sample at 59 ...
