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dc.contributor.authorSimanullang M.
dc.contributor.authorSeyhan A.
dc.contributor.authorUsami K.
dc.contributor.authorKodera T.
dc.contributor.authorKawano Y.
dc.contributor.authorOda S.
dc.date.accessioned2019-08-01T13:38:39Z
dc.date.available2019-08-01T13:38:39Z
dc.date.issued2012
dc.identifier.isbn9781566779555
dc.identifier.issn1938-5862
dc.identifier.urihttps://dx.doi.org/10.1149/1.3700868
dc.identifier.urihttps://hdl.handle.net/11480/878
dc.descriptionDielectric Science and Technology Division of ECS;Electronics and Photonics;Sensor;New Technology Subcommittee;IEEE Electron Device Society (EDS)en_US
dc.description5th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 221st ECS Meeting -- 6 May 2012 through 10 May 2012 -- Seattle, WA -- 93682en_US
dc.description.abstractThis paper reports the growth of the germanium nanowires (Ge NWs) with a single-step temperature method via vapour-liquid-solid (VLS) mechanism in the low pressure chemical vapour deposition (CVD) reactor at 300, 280 and 260°C. The Ge NWs grown at 300°C tend to have a tapered structure and the sidewalls of the nanowires were observed to be decorated with gold. The tapering was caused by the uncatalysed deposition of Ge via CVD mechanism at the sidewalls of the nanowires and significantly minimised at 260°C which leads to the formation of straight and ultra-thin Ge NWs. The sidewalls of the Ge NWs grown at 260°C were also observed not to be decorated with gold. The Ge NWs grown from 0.1-nm-thick Au at 260°C had diameter as small as ~3 nm which offers an opportunity to fabricate high-performance p-type ballistic Ge NW transistor and to realise nanowire solar cell with higher efficiency. ©The Electrochemical Society.en_US
dc.language.isoengen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subject[0-Belirlenecek]en_US
dc.titleLow-temperature growth of Ge nanowires by vapor-liquid-solid chemical vapor depositionen_US
dc.typeconferenceObjecten_US
dc.relation.journalECS Transactionsen_US
dc.departmentNiğde ÖHÜen_US
dc.identifier.volume45en_US
dc.identifier.issue3en_US
dc.identifier.startpage17en_US
dc.identifier.endpage29en_US
dc.relation.publicationcategoryKonferans Öğesi - Uluslararası - Kurum Öğretim Elemanıen_US
dc.contributor.institutionauthor[0-Belirlenecek]
dc.identifier.doi10.1149/1.3700868


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